Extended eklavya solar

Eklavya Solar Project
BY ADISHAKTI SURYANSHI TECHNOLOGY
Solar Cell: Design relics
Conceptualization & Design Development”(extended)
Member No 137343
The solar cell widely adopt technology across the world.Ekalvya Solar pioneered
are developed a piece of technology which give phenomenal response in wec 2016
. These paper give a short view the interrelationship between different Parameter of
solar cell The synthetic research are prominent role for developing these paper and
overview of it.This is small version which correct the data related to Journal .We
want to give virtual design of solar cell to enhance better possibility of
combination of finger & bus bar .These software give a under lab condition to
define basic solar cell esp Mr. Green research paper . we also release test condition
for different solar parameter as Annexure A for future release
Introduction
We are previously work on different model using software like Griddler.These
paper clearly worked on the development on Design algorithm of grid &
metallization process .Relationship of parameter are set design made by griddler
and relationship mapping is done with the Graph. Additionally as it is weekend
version it is strongly provided of solar cell fundamental & Basics
.
Solarcell basic
Previously we more exciting which variation of finger width to the power losses
.Now we concentrate on the more define design , distilled inside picture through
spectral view & modeling through stabilize simulator
Shockley–Queisserlimit
Most basic work for solar cell are define limit of solar cell.It defines as the
maximum theoretical efficiency under the Standard single p-n junction to generate
the maximum power of cell. The theoretical value single junction photovoltaic cell
is 31 %.The efficiency are limited due to loss: Blackbody
radiation,Recombination,Spectrum losses,Impedance matching &Limited
mobility

One of interesting fact is that Multi Crystalline is less efficiency than mono
crystalline because recombination loss in grain boundary of multi crystalline solar
cell
Cell Fundamentals
Photovoltaic are best known as a method for generating electric power by using
solar cells to convert energy from the sun into a flow of electrons.
The photovoltaic effect refers to photons of light exciting electrons into a higher
state of energy, allowing them to act as charge carriers for an electric current.
The operation of a photovoltaic (PV) cell requires 3 basic attributes:
 The absorptionof light, generating either electron-hole pairs or exactions.
 The separation of charge carriers of opposite types.
 The separate extraction of those carriers to an external circuit.
If we considergeneric cell are as follow
As we sees the diagram it have three part one Thick P doped region-thin n doped
reason & diffusion layer where neutral layer by junction two different layer.
The Regeneration & recombination process of electron are take when the photon
with sufficient energy are strike on the process .The electron are start flow and hole
is created ,This process is called Regeneration & when the hole & electron are
combine it called Recombination .Thumb Role inside the material is to minimize
the Recombination process & maximize of Regeneration process .
According to favorable situation the regeneration take place in emitter process &
recombination process take in the base Region(P- type) Although under the
standard condition , about 49% of regeneration process at base region .This is
disadvantage that thermal electron lifetime very less .So BSf so introduced into the
Base
BSF

cell. It acts as mirror and cause to ray multi layerscattering absorption.This is lead
based regeneration of pair is less than 21%
The example using adept software to get light of influence of Bsf& showing that
the change of energy by 0.13 ev. Same example show the difference of parameter
with Bsf& without BSFParametric shown ideally simulate Result.
Quantum efficiency
The Quantum efficiency is point parameter which used to defined the solar cell
mathematically

where Voc is the open-circuit voltage;
where Isc is the short-circuit current; and
where FF is the fill factor
where η is the efficiency
Definitions
The fill factor define the real flatness of Iv Curve. solar cell with a higher voltage
has a larger possible FF since the "rounded" portion of the IV curve takes up less
area. The maximum theoretical FF from a solar cell can be determined by
differentiating the power from a solar cell with respect to voltage and finding
where this is equal to zero
The open-circuit voltage is the maximum voltage at when all current is equal
zero. The open-circuit voltage corresponds to the amount of forward bias on the
solar cell due to the bias of the solar cell junction with the light-generated current
The short-circuit current is maximum current at which all resistance is zero. The
short-circuit current is due to the generation and collection of light-generated
carriers Here we are using current density define the cell current properties. If we
want to change into current area X thickness
Illuminated Current IL is the light generated current inside the solar cell and
is the correct term to use in the solar cell equationIt is also difference with
short circuit current which is define the current flow in the internal current

Simulation
Equivalent circuit of cell:
The solar cell can simply with the help of one diode model in which the the light
illuminated current as act source of current which denoted by JL .The Forward bias
diode shown are solar cell which followed by series resistance & shunt resistance .
the load current defined short circuit current
The diagram shown the 2 diode model, The diode shown forward bias shown
emitter –diffusion layer .The another have function is negligible small ,so we are
neglected for the solar cell functioning so the diode series resistance & shunt
resistance are taking in account .These resistance are taking of loss due shading ,
contact resistance & other loss .The R shunt ina optimize level are good for fill
factor .so better it could after wards on r shunt & r series
Shunt Resistance:
The shunt resistance are parallel component in Equivalent circuit diagram .It is one
important component for deciding of the efficiency. Shunt resistance refer to the

defect loss in solar cell. Optimized shunt resistance is needed for good solar cell
and it greatly impact on Fill factor of the solar cell .Low shunt resistance create a
alternative current flow path in the solar cell which lead to produce of Leakage
current . High Shunt resistance is lead to create localized heatspot in the cell
which lead failure of the cell.
Series Resistance
The series resistance is series components of Equivalent circuit of solar cell. This
is mainly cause by three reason:
1. The movement of current through the emitter and base of the solar cell
2. The contact resistance between the metal contact and the silicon
3. The resistance of the top and rear metal contacts.
Series resistance does not affect the solar cell at open-circuit voltage since the
overall current flow through the solar cell, and therefore through the series
resistance is zero. However, near the open-circuit voltage, the IV curve is strongly
affected by the series resistance.
The series & shunt resistance is given by:
We are considering for spectral or process value as collector design under
investigation
We are developed on the basis on collector design (Bus Bar + Finger design ) using
Gridler software which are based by finite element method

The upper diagram showrelationship between minimum finger width with the
efficiency theoretical Euetatic point are around 60 micron But we goes for 45
micron as no of spacing less(Finger no 108)
So we Start some result
We input basic input
Front Surface
No of finger : 108
No of bus bar :3
Bb Width : 1 mm
Finger Width:45
Single print print
We input basic input
Back Surface
No of finger : Full Print
No of bus bar :3
Bb Width : 3.8 mm
Padded No : 4
Pad Centre Line: .980 mm
This is generalized model autocad .dfx of cell
Thisdaigramshowitensityof voltage ourwhole currentsystem.We will maximum at the BUsbar & near
by area

Diode Volatge at 500 mV(Front sid
2.Thisdaigram showitensityof Lmininouse ourwhole currentsystem.We will minimum at the BUsbar
& near by area
Luminous at 500 mV
3.Thisdaigram show itensity of collecting current our whole current system .We will minimum at the
BUsbar

Current Density at 500 mV
Result I V curve is as follow
Losses Distribution chart

The quantum efficiency is always small total efficiency The loss are in Design are in graph

These graph are showing Loss Distribution under STP condition
 Result:
 Maximum diode voltage are occur at Bus Bar near Byarea
 Minimum Collecting Current occur at the bus bar
 Whenthe increase the width ofBus bar thenit is decrease ofefficiency
Effect of Bus Bar Width With the Various Parameter:

Sno BUS baRwidh Eff Fill F Voc Jsc
1 0.7 20.11 80.75 0.66 37.72
2 0.8 20.07 80.75 0.66 37.64
3 0.9 20.02 80.76 0.66 37.67
4 1 19.98 80.77 0.66 37.5
5 1.1 19.94 80.78 0.66 37.42
6 1.2 19.9 80.78 659 37.35
7 1.3 19.85 80.79 659 37.28
8 1.4 19.81 80.79 659 37.21
Thank You All The Person To Show the Interest my Working .ThIs is
conceptualization model like cad but give theoretical overview of solar cell
20.11
20.07
20.02
19.98
19.94
19.9
19.85
19.81
0.7 0.8 0.9 1 1.1 1.2 1.3 1.4
Eff:
Bus BarWIdth
Eff Graph
Series1
Linear (Series1)
0.7 0.8 0.9 1 1.1 1.2 1.3 1.4
Series1 37.72 37.64 37.67 37.5 37.42 37.35 37.28 37.21
37.72
37.64 37.67
37.5
37.42
37.35
37.28
37.21
36.9
37
37.1
37.2
37.3
37.4
37.5
37.6
37.7
37.8
ISC Graph
Series1 Linear (Series1)

Extended Version(V 2.0.1/)
Thisanalysisgive detailed graph analysis impact of parameter with the no of Bus bar on the 108 finger
solar cell
Bus bar Vs front Shading loss
BB Front shading (W/cm2
)
2 0.99
3 1.13
4 1.9
5 1.6
The maximumlossare in 4 bb the trend shown the loss in 5 bb less due better grid distribution 5 than
4
Bus Bar Vs Power Output
BB Power Output
2 19.85
3 19.86
4 20.06
5 20
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
2
3
4
5
Power Loss
BusBar

v
The maximum power output are in 4 bb . The trend shown first increase to 4 then decrease
Bus bar vs Jsc
BB JSC
2 37.88
3 37.63
4 37.54
5 37.36
The trend shownthe shortcircuitcurrent are decrease withincrease of bb.The lowestis in 5 (the series
resistance increase due to metallization
Bus bar vs Fill factor
BB Fill factor
2 79.39
19.8
19.85
19.9
19.95
20
20.05
20.1
0 1 2 3 4 5 6
PowerOutpt
Bus Bar
BB VS POWERO/P
37.1
37.2
37.3
37.4
37.5
37.6
37.7
37.8
37.9
38
2 3 4 5
Isc
No Of Bus Bar

3 80.1
4 81.2
5 81.39
The Fill factor is increase with increase of no of bus bar. show maximum are at 5 bb
Bus bar Vs Front Resistive Loss
BB Front Resistive Loss
2 1.48
3 0.57
4 1.6
5 1.3
78
78.5
79
79.5
80
80.5
81
81.5
82
2 3 4 5
FillFactor
Bus bar
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
2
3
4
5
Front Resistive loss
Busbar

The front Resistive is maximum at 4 bb .This trend unusual but region which ,metallization per unit
area are more
Bus Bar Vs Efficiency
BB eff
2 19.87
3 19.89
4 20.12
5 20.06
The maximum efficiency in bus bar in 4 bus bar but decrease in 5 bus bar
Bus Bar Vs semiconductor Loss
BB Semiconductor loss
2 0.16
3 0.16
4 0.16
5 0.15
19.7 19.75 19.8 19.85 19.9 19.95 20 20.05 20.1 20.15
2
3
4
5
Efficency
BusBar
0.144 0.146 0.148 0.15 0.152 0.154 0.156 0.158 0.16 0.162
2
3
4
5
Semiconductor Loss
BusBar

The minimum loss are in bus bar 5
Result:
Main condition the no of finger that is 108 . we found behave of solar cell is if we change of number
bus bar .Maximum efficiency is given in 4 Bus bar in 108 finger under set condition. The short circuit
current is always shown decrease trend with the increase of number Bus bar .The fill factor is increased
withincreasedof Noof bus bar .The maximumpowerare generatedin4 bus bar
Credit
Sri satya are pioneered for development of thisextended for deep information about this paper .This is
extended version which extended & define relationship. Ms Aditi chauhan & Mr Divya also thank for
valuable feedbackforthe same.
This work done under the Adishakti Suryanshi Technology which are copyrightwork (Reg noW0XC-DR5Z-
Y3J4-BI42)
Regards
Prateekverma

Extended eklavya solar

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